助理研究员

陈鑫
  • 类别:助理研究员
  • 研究方向: 第一性原理计算
  • 电话:
  • 邮箱:xin.chen@iat.cn

简历介绍

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陈鑫,男,汉族,1992年生,群众,籍贯山东历城区,助理研究员。本硕毕业于山东大学,博士毕业于瑞典乌普萨拉大学,2021-2023年南方科技大学博士后。研究方向包括固体热输运模拟和第一性原理计算。在Phys. Rev. B, Appl. Rev. Lett.等期刊发表研究文章22篇,总引用次数超过500次。曾获国家留学基金委奖学金、广东省海外博士后人才支持项目等资助。

承担科研项目情况

Research Projects

近五年文章:

  • X. Chen, D. Wang, L. Li, B. Sanyal, "Giant spin-splitting and tunable spin-momentum locked transport in room temperature collinear antiferromagnetic semimetallic CrO monolayer," Appl. Phys. Lett., 2, 22402 (2023).
  • R. Gupta, F. Cosco, R. S. Malik, X. Chen, S. Saha, A. Ghosh, T. Pohlmann, J. R. L. Mardegan, S. Francoual, R. Stefanuik, "Element-resolved evidence of superdiffusive spin current arising from ultrafast demagnetization process," Phys. Rev. B, 108, 64427 (2023).
  • Y. Yu, X. Chen, X. Liu, J. Li, B. Sanyal, X. Kong, F. M. Peeters, L. Li, "Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting properties, and tunable topological states in two-dimensional rare-earth metal dinitrides," Phys. Rev. B, 105, 24407 (2022).共一
  • S. Husain, S. Pal, X. Chen, P. Kumar, A. Kumar, A. K. Mondal, N. Behera, N. K. Gupta, S. Hait, R. Gupta, "Large Dzyaloshinskii-Moriya interaction and atomic layer thickness dependence in a ferromagnet-WS2 heterostructure," Phys. Rev. B, 105, 64422 (2022).
  • L. Pandey, S. Husain, X. Chen, V. Barwal, S. Hait, N. K. Gupta, V. Mishra, A. Kumar, N. Sharma, N. Kumar, "Weak antilocalization and electron-electron interactions in topological insulator BixTey films deposited by sputtering on Si (100)," Phys. Rev. Materials, 6, 44203 (2022).
  • D. Wang, X. Chen, B. Sanyal, "Unraveling complex magnetism in two-dimensional FeS2," Phys. Rev. B, 104, 245410 (2021).通讯
  • X. Chen, S. Esteban-Puyuelo, L. Li, B. Sanyal, "Structural phase transition in monolayer gold (I) telluride: From a room-temperature topological insulator to an auxetic semiconductor," Phys. Rev. B, 103, 75429 (2021).
  • X. Chen, L. Li, F. M. Peeters, B. Sanyal, "Two-dimensional oxygen functionalized honeycomb and zigzag dumbbell silicene with robust Dirac cones," New J. Phys., 23, 23007 (2021).
  • X. Chen, A. Bouhon, L. Li, F. M. Peeters, B. Sanyal, "PAI-graphene: A new topological semimetallic two-dimensional carbon allotrope with highly tunable anisotropic Dirac cones," Carbon, 170, 477-486 (2020).
  • S. Husain, X. Chen, R. Gupta, N. Behera, P. Kumar, T. Edvinsson, F. García-Sánchez, R. Brucas, S. Chaudhary, B. Sanyal, "Large damping-like spin–orbit torque in a 2D conductive 1T-TaS2 monolayer," Nano Lett., 20, 6372-6380 (2020).
  • F. O. Johansson, X. Chen, O. Eriksson, B. Sanyal, A. Lindblad, "Interlayer charge transfer in tin disulphide: Orbital anisotropy and temporal aspects," Phys. Rev. B, 102, 35165 (2020).
  • X. Chen, D. Wang, X. Liu, L. Li, B. Sanyal, "Two-Dimensional Square‑A2B (A = Cu, Ag, Au, and B = S, Se): Auxetic Semiconductors with High Carrier Mobilities and Unusually Low Lattice Thermal Conductivities," J. Phys. Chem. Lett., 11, 2925-2933 (2020).
  • L. Li, X. Kong, X. Chen, J. Li, B. Sanyal, F. M. Peeters, "Monolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number," Appl. Phys. Lett., 117, 14, (2020).通讯
  • S. Chen, X. Chen, E. A. Duijnstee, B. Sanyal, T. Banerjee, "Unveiling temperature-induced structural domains and movement of oxygen vacancies in SrTiO3 with graphene," ACS Appl. Mater. Interfaces, 12, 47, 52915–52921, (2020).
  • X. Chen, Y. Liu, B. Sanyal, "Manipulation of Electronic and Magnetic Properties of 3d Transition Metal (Cr, Mn, Fe) Hexamers on Graphene With Vacancy Defects: Insights From First Principles Theory," J. Phys. Chem. C, 2019.